Carrier transport and electronic defects in gallium oxide studied by photoconductivity techniques
Abstract Two complementary localised density of states spectroscopies, Modulated Photo-Conductivity (MPC) and the Constant Photocurrent Method (CPM) are applied to Ga 2 O 3 thin films and are shown to be sensitive to carrier traps above and below the Fermi level, respectively. These techniques measure the film directly, without requiring a Schottky or p-n junction, which may offer advantages over conventional techniques in the study of high-resistivity or semi-insulating materials. The benefits of a higher-resolution MPC analysis are demonstrated.
Authors
- Fabien Massabuau (ORCID: https://orcid.org/0000-0003-1008-1652)
- Matthew D. Smith (ORCID: https://orcid.org/0000-0001-6145-1209)
- S. Reynolds (ORCID: https://orcid.org/0000-0002-1514-6382)
- David G. Nicol (ORCID: https://orcid.org/0000-0003-3746-5138)
- Martin Kuball (ORCID: https://orcid.org/0000-0003-3070-1070)
- Arpit Nandi (ORCID: https://orcid.org/0000-0003-1160-8655)
- Sai Charan Vanjali
Institutions
- University of Dundee (GB)
- University of Strathclyde (GB)
- University of Bristol (GB)
- Bristol Robotics Laboratory (GB)
Publication Details
- Journal
- Journal of Physics Conference Series
- Published
- 2025-02-01
- DOI
- https://doi.org/10.1088/1742-6596/2952/1/012001
- Citations
- 1
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.43
Funders
- Engineering and Physical Sciences Research Council