New Interconnection Technologies Based on Ni Micro-plating Bonding for High-temperature Resistant Power Device Packaging

This study proposes Ni Micro-Plating Bonding (NMPB) as a new bonding method for semiconductor packages for power devices with high heat resistance such as SiC. NMPB enables bonding at low temperatures (55°C) by using nickel plating, a high melting point metal. Bonding was conducted using newly developed Ni plating solution and lead frames with a chevron-shaped profile designed for NMPB, and the strength and microstructure of the bonded area were evaluated. As a result, it was found that bonding with NMPB exhibits stronger bonding strength compared to conventional lead-free solder. Furthermore, the electrical characteristics of power modules connected by NMPB were evaluated, confirming normal operation at both room temperature and high temperature (250°C). Thus, NMPB is suggested as a new high-temperature device-compatible bonding technology applicable to replace conventional bonding techniques.