Biasing Circuit Implementation on DGS for Application on 5G mm-Wave SPDT RF Switch
This paper presents a novel investigation into the integration of DC biasing circuits within single-unit DGS. Two distinct DGS configurations have been examined by using parametric studies to reveal how their unique electromagnetic wave propagation characteristics interact with the biasing circuits. The attenuation response analysis suggests that the dimensions and placement of the biasing circuit structure within the DGS design are critical factors to consider in the future development of electronically switchable DGS. Consequently, it is anticipated that such DGS architectures will be well-suited for integration into 5G mm-wave SPDT RF switches.
Authors
- A. Othman (ORCID: https://orcid.org/0000-0002-9455-7453)
- Noor Azwan Shairi (ORCID: https://orcid.org/0000-0002-4611-5116)
- Najib Al-Fadhali (ORCID: https://orcid.org/0000-0003-0472-2169)
- Huda A. Majid (ORCID: https://orcid.org/0000-0003-2144-8579)
- Mohd Asri Jusoh (ORCID: https://orcid.org/0000-0001-8051-3970)
- Zarina Ashikin Zakaria (ORCID: https://orcid.org/0000-0001-7045-2318)
Institutions
- Technical University of Malaysia Malacca (MY)
- Universiti Malaysia Perlis (MY)
- Tun Hussein Onn University of Malaysia (MY)
Publication Details
- Published
- 2024-12-21
- DOI
- https://doi.org/10.1109/apace62360.2024.10877287
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Universiti Tun Hussein Onn Malaysia