2D MoS₂ Layer as Element of Terahertz Range Antenna

To enhance device and circuit functions many new reconfigurable technologies of run-time control ware explored. Owing to their atomic-thin thickness and high sensitivity to external electrical fields two-dimensional (2D) materials can provide a suitable platform for those technology. The ability to use 2D semiconductors for reconfiguration of antenna parameters in terahertz region is considered. A patch antenna composed square metallic element, <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{MoS}_{2}$</tex> layer, and a metal ground plane feeding by microstrip transmission line is studied in frequency range of 300 - 500 GHz. GaN is used as a dielectric substrate forming hybrid 2D/3D heterojunction with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{MoS}_{2}$</tex>. Optical pump as a factor impacting to conductive, and impedance of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{MoS}_{2}$</tex> layer is considered. Model parameters and material properties for antenna application were discussed. Antenna characteristics, depending on <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{MoS}_{2}$</tex> layer properties have been determined by ANSYS HFSS software.