Demonstration of Scanning Near-Field Microwave Microscopy of Sub-fF Vertical MOS Capacitors Using Six-Port Interferometry

Scanning Microwave Microscopy (SMM) is a powerful technique for probing the electrical properties of nanoscale devices. In this work, we present a novel implementation of SMM considering a six-port interferometer as alternative to the conventional vector network analyzer (VNA). In particular, sub-fF vertical metal-oxide-semiconductor (MOS) microsized capacitors, are exemplary characterized using both proposed solution and conventional set-up. This approach extends the capabilities of six-port technology for accurate evaluation of highimpedance nanoscale devices, offering a more compact and costeffective solution for advanced SMM applications.