Experimental Study of the Comparison of the Synergistic Effect of Total Ionizing Dose and Neutron Single Event on Si/SiC MOSFETs

A comparative study on the synergistic effect of the total ionizing dose and neutron single event effect on a SiC MOSFET and Si MOSFET was performed based on the 60Co γ source and the high-pressure multiplier 14 MeV neutron source at the China Institute of Atomic Energy. First, a γ-ray total ionizing dose experiment was performed on these two devices, and the differences in the total ionizing dose damage of the SiC and Si MOSFETs were analyzed. Then, neutron single event effect experiments were performed to investigate the effects of different doses on the single event effect for the devices. The results indicate that the unhardened SiC MOSFET has stronger resistance to the total ionizing dose compared with hardened Si MOSFET. During the 14 MeV neutron irradiation experiment, no single event burnout was observed in either device, but single event transients were observed. Even though the hardened Si MOSFETs are capable of suppressing single event transient currents at a higher drain bias, the trapped charge concentration of SiC MOSFETs due to irradiation is smaller than that of Si MOSFETs, which improves their resistance to the total ionizing dose and makes them less affected by the synergistic effect of the total ionizing dose and neutron single event effects. The research results can provide some guidelines for the radiation hardening technology of power devices used in aerospace and nuclear industries.