High-throughput phase exploration of ternary transition metal carbide TM-X-C (X=Al/Si) thin films

Transition metal carbides (TMCs) are highly valued for their exceptional thermal stability (melting temperatures up to 4000 °C), refractory character, and outstanding mechanical properties, particularly hardness. These properties make TMCs crucial for applications in extreme conditions, such as in aerospace and tooling industries. Striving for novel oxidation-resistant ternary carbides, we systematically screened the phase formation of TM-X-C (where X = Al or Si) using a combined theoretical and experimental high-throughput approach. Density functional theory (DFT) calculations forecast the phase formation of (meta)stable TM-X-C solid solutions (with TM = Ti, Zr, Hf, Ta, W) using the formation energy and lattice constant ratios as structural key parameters. These theoretical predictions are experimentally validated by synthesizing over 260 compositions across the 10 different TM-X-C material systems by combinatorial magnetron sputtering. The DFT calculations indicated that Si preferentially occupies both C and TM sites, while Al tends to fill TM sites. Structural analysis experimentally confirmed the formation of face-centered-cubic TM-X-C solid solutions up to alloying contents of 25–30 at.% – for all material families except W-X-C. Additional TEM investigation confirmed the formation of fcc solid solutions. A strong correlation between prevalent phases and mechanical properties is observed, with the highest hardness values (30–40 GPa) found for fcc structured TM-X-C thin films, followed by a significant decrease entering multi-phased or amorphization phase regions – typically occurring above 25 at.% Al or Si. This comprehensive phase screening paves the way for a targeted development of novel TM-X-C ceramic thin film materials.

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Publication Details

Journal
Acta Materialia
Published
2025-02-16
DOI
https://doi.org/10.1016/j.actamat.2025.120839
Citations
5
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
3.65

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article

High-throughput phase exploration of ternary transition metal carbide TM-X-C (X=Al/Si) thin films

D. A. Danner, Daniel Primetzhofer, P. Polcik, J. Ramm et al.
5 citations
Acta Materialia
Semiconductor materials and devices
3.65
article

High-throughput phase exploration of ternary transition metal carbide TM-X-C (X=Al/Si) thin films

D. A. Danner, Daniel Primetzhofer, P. Polcik, J. Ramm, H. Riedl, Tomasz Wójcik, Eleni Ntemou, Rainer Hahn, S. Kolozsvári, S. Richter, Carmen Jerg, C. Gutschka
article en
5 citations

Abstract

Transition metal carbides (TMCs) are highly valued for their exceptional thermal stability (melting temperatures up to 4000 °C), refractory character, and outstanding mechanical properties, particularly hardness. These properties make TMCs crucial for applications in extreme conditions, such as in aerospace and tooling industries. Striving for novel oxidation-resistant ternary carbides, we systematically screened the phase formation of TM-X-C (where X = Al or Si) using a combined theoretical and experimental high-throughput approach. Density functional theory (DFT) calculations forecast the phase formation of (meta)stable TM-X-C solid solutions (with TM = Ti, Zr, Hf, Ta, W) using the formation energy and lattice constant ratios as structural key parameters. These theoretical predictions are experimentally validated by synthesizing over 260 compositions across the 10 different TM-X-C material systems by combinatorial magnetron sputtering. The DFT calculations indicated that Si preferentially occupies both C and TM sites, while Al tends to fill TM sites. Structural analysis experimentally confirmed the formation of face-centered-cubic TM-X-C solid solutions up to alloying contents of 25–30 at.% – for all material families except W-X-C. Additional TEM investigation confirmed the formation of fcc solid solutions. A strong correlation between prevalent phases and mechanical properties is observed, with the highest hardness values (30–40 GPa) found for fcc structured TM-X-C thin films, followed by a significant decrease entering multi-phased or amorphization phase regions – typically occurring above 25 at.% Al or Si. This comprehensive phase screening paves the way for a targeted development of novel TM-X-C ceramic thin film materials.

Acta MaterialiaVol. 288
Uppsala University (SE), TU Wien (AT), Christian Doppler Laboratory for Thermoelectricity (AT), Oerlikon (Liechtenstein) (LI), Plansee (Germany) (DE)
Christian Doppler Forschungsgesellschaft
Openalex Percentile: Top 8%
Semiconductor materials and devices
3.65
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