Effects of precursor solution stirring time on structural and electrical properties of Pb(Zr,Ti)O3 films fabricated by sol-gel method

Pb 0.40 (Zr 0.65 Ti 0.35 )O 3 (PZT) films were prepared by the sol-gel method using precursor solutions with different stirring time. It was found that the orientation of the PZT films can be altered by increasing the stirring time, as well as producing more uniform surfaces and reduced roughness. Compared to the film prepared from the precursor stirred for 5 h, the PZT film prepared from the precursor stirred for 13.5 h exhibited enhanced ferroelectric polarization, higher permittivity and more pronounced electrical domain responses. The domain switching and domain wall motion in the PZT films were analyzed by scaling laws and the Rayleigh model, respectively. This study demonstrates that by adjusting the stirring time of the precursor solution, the crystalline orientation of the ferroelectric films can be effectively controlled and the ferroelectric and dielectric properties can be optimized.