Improving the thermoelectric performance of scandium nitride thin films by implanting helium ions

Abstract Ion implantation is a widely used technique to introduce defects in low-dimensional materials and tune their properties. Here, we investigate the thermoelectric properties of scandium nitride thin films implanted with helium ions, revealing a positive impact of defect engineering on thermoelectric performance. Transport properties modeling and electron microscopy provide insights on the defect distribution in the films. The electrical resistivity and Seebeck coefficient increase significantly in absolute values after implantation and partially recover upon annealing as some of the implantation-induced defects heal. The thermal conductivity decreases by 46 % post- implantation due to the formation of extended defects and nanocavities. Consequently, the thermoelectric figure of merit zT doubles for the sample annealed at 673 K. These findings highlight the potential of controlled ion implantation to enhance thermoelectric properties in thin films, paving the way for further optimization through defect engineering.

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Publication Details

Journal
Communications Materials
Published
2025-02-15
DOI
https://doi.org/10.1038/s43246-025-00741-2
Citations
4
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
2.07

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article

Improving the thermoelectric performance of scandium nitride thin films by implanting helium ions

Fabien Giovannelli, Johan Nyman, Razvan Burcea, Per Eklund et al.
4 citations
Communications Materials
Advanced Thermoelectric Materials and Devices
2.07
article

Improving the thermoelectric performance of scandium nitride thin films by implanting helium ions

Fabien Giovannelli, Johan Nyman, Razvan Burcea, Per Eklund, Danièle Fournier, Hugo Bouteiller, S. Dubois, Arnaud le Febvrier, Younès Ezzahri, J. F. Barbot, Charlotte Poterie
article en
4 citations

Abstract

Abstract Ion implantation is a widely used technique to introduce defects in low-dimensional materials and tune their properties. Here, we investigate the thermoelectric properties of scandium nitride thin films implanted with helium ions, revealing a positive impact of defect engineering on thermoelectric performance. Transport properties modeling and electron microscopy provide insights on the defect distribution in the films. The electrical resistivity and Seebeck coefficient increase significantly in absolute values after implantation and partially recover upon annealing as some of the implantation-induced defects heal. The thermal conductivity decreases by 46 % post- implantation due to the formation of extended defects and nanocavities. Consequently, the thermoelectric figure of merit zT doubles for the sample annealed at 673 K. These findings highlight the potential of controlled ion implantation to enhance thermoelectric properties in thin films, paving the way for further optimization through defect engineering.

Communications MaterialsVol. 6(1)
Linköping University (SE), Université de Tours (FR), Uppsala University (SE), Centre National de la Recherche Scientifique (FR), National Institute for Materials Science (JP), Université Paris-Saclay (FR), Institut Pprime (FR), Sorbonne Université (FR), CentraleSupélec (FR), Thion Medical (France) (FR), Institut des NanoSciences de Paris (FR), Laboratoire de Cristallographie et Sciences des Matériaux (FR), LINK - Laboratory for Innovative Key Materials and Structures
Agence Nationale de la Recherche, Knut och Alice Wallenbergs Stiftelse, Vetenskapsrådet, Energimyndigheten
Openalex Percentile: Top 15%
Advanced Thermoelectric Materials and Devices
2.07
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