Electronic structure of a narrow-gap semiconductor KAg<sub>3</sub>Te<sub>2</sub>

Abstract KAg 3 Te 2 with a layered crystal structure has been predicted to be a possible topological insulator. Through electrical transport measurements, we revealed its semiconducting behavior with a narrow band gap of ∼0.4 eV and p-type character. The infrared transmission spectra of single crystals yielded an optical band gap of ∼0.3 eV. Angle-resolved photoemission spectroscopy reveals a bulk energy gap at the Brillouin zone center, with no observable surface state, suggesting that KAg 3 Te 2 is a topological trivial narrow-gap semiconductor. The experimentally determined effective mass of the holes in KAg 3 Te 2 is very small (∼0.12 m e ). The valence band maximum is quasi-two-dimensional, while the conduction band minimum is fully three-dimensional. Such intriguing dimensional anisotropy can be attributed to the distinct orbital contributions from K, Ag, and Te atoms to the respective bands.

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Publication Details

Journal
Chinese Physics B
Published
2025-02-15
DOI
https://doi.org/10.1088/1674-1056/adb680
Primary Topic
Inorganic Chemistry and Materials
Type
article
Field-Weighted Citation Impact
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article

Electronic structure of a narrow-gap semiconductor KAg3Te2

Rong Feng, Haoran Liu, Xunqing Yin, Wei Zhou et al.
Chinese Physics B
Inorganic Chemistry and Materials
article

Electronic structure of a narrow-gap semiconductor KAg3Te2

Rong Feng, Haoran Liu, Xunqing Yin, Wei Zhou, Xiaofeng Xu, Feng Liu, Zhiyuan Liu, Wentao Zhang, Guohua Wang, Qian Dong, Haotian Zheng, Weidong Luo, Binru Zhao
article en

Abstract

Abstract KAg 3 Te 2 with a layered crystal structure has been predicted to be a possible topological insulator. Through electrical transport measurements, we revealed its semiconducting behavior with a narrow band gap of ∼0.4 eV and p-type character. The infrared transmission spectra of single crystals yielded an optical band gap of ∼0.3 eV. Angle-resolved photoemission spectroscopy reveals a bulk energy gap at the Brillouin zone center, with no observable surface state, suggesting that KAg 3 Te 2 is a topological trivial narrow-gap semiconductor. The experimentally determined effective mass of the holes in KAg 3 Te 2 is very small (∼0.12 m e ). The valence band maximum is quasi-two-dimensional, while the conduction band minimum is fully three-dimensional. Such intriguing dimensional anisotropy can be attributed to the distinct orbital contributions from K, Ag, and Te atoms to the respective bands.

Chinese Physics BVol. 34(4)
Shanghai Jiao Tong University (CN), Suzhou University of Technology (CN), Collaborative Innovation Center of Advanced Microstructures (CN), Institute of Physics (CN), Zhejiang University of Technology (CN), Nanjing University (CN)
Openalex Percentile: Top 98%
Inorganic Chemistry and Materials
DOISourceOpenAlex
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Electronic structure of a narrow-gap semiconductor KAg<sub>3</sub>Te<sub>2</sub> — Rong Feng, Haoran Liu, et al. · Chinese Physics B (2025) | TGRS Research Map | TGRS