Preparation of MOCVD-grown Photocathodes containing a Strained GaAs/GaAsP Superlattice

In this work, we investigate heat cleaning options for high-polarization GaAs/GaAsP strained-superlattice (SSL) photocathodes with a distributed Bragg reflector (DBR) that were grown using metalorganic chemical vapor deposition (MOCVD). This was done using a microMott polarimeter at Jefferson Lab to optimize both quantum efficiency and polarization. The fabrication process for MOCVD-grown photocathodes does not allow for the inclusion of an arsenic cap, contrary to what is done when fabricating photocathodes using molecular-beam epitaxy (MBE). Without proper preparation, the performance of MOCVD-grown photocathodes can be limited due to surface contamination. Here, we varied both duration and temperature of the heat cleaning process and observed increased quantum efficiency with negligible loss of polarization. Results of the optimized cleaning process in addition to upgrades to the testing apparatus are presented.