DC Analysis of Symmetrical and Asymmetrical T Gate AIGaN/GaN Based HEMT

A Symmetrical and an Asymmetrical T-shaped gate AIGaN/GaN based High Electron Mobility Transistor (HEMT) characterized by a gate length of 100 nm have been conceptualized and subjected to comparative analysis. The DC analysis conducted on both structures indicates an enhancement in drain current for the Asymmetrical T-gate HEMT; however, the Symmetrical T-gate HEMT configuration demonstrates superior threshold voltage characteristics. Asymmetrical T gate HEMT shows higher Transconductance than its Symmetrical counterpart. Output conductance is low for Symmetrical T gate HEMT. Hence with higher Transconductance an Asymmetrical AIGaN/GaN based HEMT is a promising design for RF application in microwave devices.