Analysis of Electrical Parameters for the Spacerbased Double Gate Junctionless Tunnel Field Effect Transistor

The advantageousness of spacer dielectric on both sides of gate oxide on the device performance of a “Double-gate junctionless TFET (DGJLTFET)” is discussed. The on-current is the primary parameter that has been explored. A high-k spacer significantly reduces “OFF-state leakage current by several orders of magnitude”, increasing the device's scalability. The DC and Analog/RF performance parameters of the device analyzed in this work are the “Drain Current” (IDS), ON-state to OFF-state current ratio (ION/IOFF), DIBL, Vth, Intrinsic gain, Output conductance (gds), transconductance/drain current ratio (gm/IDS), Cut-off frequency (fT), and TFP. The impact of increasing the spacer's dielectric constant (kspacer) on the device's electrical properties are investigated. However, increasing the spacer's dielectric constant has a negligible effect on the ONstate current.