Impact of Metal Gate Composition on Ultra-Thin HfYO<sub>x</sub> Gate Dielectrics
HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and Y<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> targets were used in RF magnetron co-sputtering to deposit a high-k ultra-thin HfYO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> gate dielectric on an n-Si<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.81</inf>Ge<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.19</inf> substrate. In this paper, the effects of Mo, MoTaN, MoTiN, and MoNi metal gates were investigated. According to experimental findings, metal gate MoNi shows superior electrical properties with compared to the others, therefore thought to be promising for applications using p-channel MOS devices.
Authors
- S. Mallik (ORCID: https://orcid.org/0000-0001-9232-7411)
- Partha Pratim Maiti (ORCID: https://orcid.org/0000-0002-1139-459X)
Institutions
- Biju Patnaik University of Technology (IN)
- National Institute of Science and Technology (IN)
Publication Details
- Published
- 2024-11-29
- DOI
- https://doi.org/10.1109/aespc63931.2024.10872015
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00