Design Specification and Performance Analysis of Core-Shell $In_{1-x}Ga_{x}\text{As}$ FinFET

This work presents a comparison study of silicon core-shell FinFET and Bulk InGaAs FinFET using a well-calibrated numerical simulation framework. We thoroughly an-alyzed crucial parameters like subthreshold swing (SS), drain-induced barrier lowering (DIBL), switching ratio, drive current, transconductance, transconductance efficiency, and various RF metrics for both devices. Due to the introduction of the Silicon core, the core-shell structure shows better electrostatics integrity in terms of reduced short-channel effects and leakage current. A substantial enhancement in the switching ratio has been observed. Also, due to the improved electrostatic integrity, improvement in analog figure of merits is observed. However, RF performance of the device degrades due to enhanced gate capacitace.