Effect of Fluorine Implant Energy on the Performance of P+/N-Junction, Poly-Si Resistor, and PMOS

This study investigates the enhancement of Complementary Metal Oxide Semiconductor (CMOS) technology electrical characteristics and reliability through the co-implantation of Fluorine with Boron Fluoride (BF<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>). The effects of Fluorine implantation on three devices - P+/N-junction, P+ Poly-resistors, and PMOS transistors are explored. The results show that higher Fluorine implant energies increase leakage currents at P+/N-junctions while having a comparable breakdown voltage. In contrast, the P+ Poly sheet resistance decreases with increasing Fluorine implant energy at different measurement temperatures, with a minimum Temperature Coefficient of Resistance (TCR) achievable at specific Fluorine implant energies. Furthermore, in PMOS devices, higher Fluorine implant energies improve Drain-Induced Barrier Lowering (DIBL) around 20% and reduce approximately 3% of Negative Bias Temperature Instability (NBTI) degradation. The electrical characteristics of PMOS, such as threshold voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf>) increase, Flat band voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FB</inf>) and transconductance (g<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf>) decrease due to the Oxide thickness (T<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</inf>) increase by implanting high Fluorine energy. This study reveals that high Fluorine energy with BF<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> is a viable co-implantation for optimizing CMOS process integration scheme.