Detection of Neutron Irradiation-Induced Crystal Defects in Silicon with Photoluminescence, Deep Level Transient Spectroscopy and Dark Current Measurements on CMOS Image Sensors
Vincent Goiffon (ORCID: https://orcid.org/0000-0001-5024-0115)
Juan Esteban Montoya Cardona
Sylvain Joblot
Institutions
Laboratoire d'Analyse et d'Architecture des Systèmes (FR)
Institut Superieur de l'Aeronautique et de l'Espace (ISAE-SUPAERO) (FR)
Laboratoire des Technologies de la Microélectronique (FR)
Publication Details
Journal
SPIRE - Sciences Po Institutional REpository
Published
2024-09-16
Primary Topic
Silicon and Solar Cell Technologies
Type
article
Field-Weighted Citation Impact
0.00
Funders
Université Catholique de Louvain
Centre National de la Recherche Scientifique
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Detection of Neutron Irradiation-Induced Crystal Defects in Silicon with Photoluminescence, Deep Level Transient Spectroscopy and Dark Current Measurements on CMOS Image Sensors
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Journal
SPIRE - Sciences Po Institutional REpository
Topics
Silicon and Solar Cell Technologies
article
Detection of Neutron Irradiation-Induced Crystal Defects in Silicon with Photoluminescence, Deep Level Transient Spectroscopy and Dark Current Measurements on CMOS Image Sensors
Éric Imbernon, Aubin Antonsanti, Alexandre Le Roch, Richard Monflier, Olivier Marcelot, Vincent Goiffon, Juan Esteban Montoya Cardona, Sylvain Joblot
article en
Abstract
No abstract available for this paper.
Publication Tag
SPIRE - Sciences Po Institutional REpository
Institutions
Laboratoire d'Analyse et d'Architecture des Systèmes (FR), Institut Superieur de l'Aeronautique et de l'Espace (ISAE-SUPAERO) (FR), Laboratoire des Technologies de la Microélectronique (FR)
Funders
Université Catholique de Louvain, Centre National de la Recherche Scientifique