In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides

Using in situ reflection electron microscopy we have presented latest studies of Si(111) and Bi 2 Se 3 (0001) surface processes during sublimation, homo- and heteroepitaxial growth of layered metal chalcogenides. A structural kinetic diagram of interaction between a selenium molecular beam and Si(111) surface has been demonstrated. We have shown congruent sublimation caused by annealing of Bi 2 Se 3 (0001) substrates in a selenium flux, visualized and described layer by layer homoepitaxial Bi 2 Se 3 growth. We have presented techniques of layered SnSe 2 and In 2 Se 3 growth on Si(111) and Bi 2 Se 3 (0001) surfaces and shown that heteroepitaxial growth starts with the 2D islands formation. The nucleation and growth of an impurity-induced phase in the form of 0.4 nm high 2D islands during high-temperature submonolayer indium deposition on Bi 2 Se 3 (0001) under exposure to Se molecular beam has been demonstrated.