High-power GeSn photodetector for 2-<i>μ</i>m RoF system
A radio-over-fiber (RoF) link simplifies the base station and network structure, adapting to the trends of high capacity and rapid development in modern communication. The development of 2-μm-band links improves the capacity of communication systems, which can solve future optical fiber capacity crises. In this work, a relaxed high-Sn-content GeSn absorption layer was grown on a Si substrate, and high-power GeSn photodetectors were fabricated. The photodetectors achieved a low dark current with a cutoff wavelength of about 2930 nm. The GeSn photodetectors had a saturated photocurrent of up to 70 mA operating in the 2-μm-wavelength range and a 3-dB bandwidth of approximately 1.6 GHz. The results provide a technical reference for the application of GeSn 2-μm detectors in RoF links.
Authors
- Jinlai Cui (ORCID: https://orcid.org/0000-0003-2899-6201)
- Qinxing Huang
- Buwen Cheng (ORCID: https://orcid.org/0000-0002-6547-1458)
- Jun Zheng (ORCID: https://orcid.org/0000-0002-8622-2661)
- Zhi Liu (ORCID: https://orcid.org/0000-0001-5346-7569)
- Jiayi Li (ORCID: https://orcid.org/0009-0005-3308-4284)
- Yuhua Zuo
- Yiyang Wu
- Xiangquan Liu (ORCID: https://orcid.org/0000-0002-4664-4544)
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-02-10
- DOI
- https://doi.org/10.1063/5.0250619
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China
- Youth Innovation Promotion Association