Tailoring the Tunneling‐Effect‐Boosted Interfacial Charge Trapping via Effective Conjugation Length (Adv. Funct. Mater. 7/2025)
Interfacial Charge Trapping The novel perception of a memory transistor based on tunneling-effect-boosted interfacial charge trapping is introduced by Yu-Cheng Chiu and co-workers in article number 2415415. The organic thin film transistor can behave like a memory device under photo-assisted programming/erasing operations, leading to the multimodal functionality of this device for in-memory computing, in-sensor computing, potentially supporting neuromorphic computing, machine learning, and AI development.
Authors
- Rosari Saleh (ORCID: https://orcid.org/0000-0003-1606-620X)
- Hailin Peng (ORCID: https://orcid.org/0000-0003-1569-0238)
- Yu‐Cheng Chiu (ORCID: https://orcid.org/0000-0003-4812-5681)
- Suhendro Purbo Prakoso (ORCID: https://orcid.org/0000-0003-0783-7586)
- Qi‐An Hong (ORCID: https://orcid.org/0009-0005-0930-6625)
- Mei‐Nung Chen
Institutions
- National Taiwan University of Science and Technology (TW)
- National Taiwan University (TW)
- Tohoku University (JP)
- University of Indonesia (ID)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2025-02-01
- DOI
- https://doi.org/10.1002/adfm.202570038
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00