<i>In situ</i> growth of ultrathin Y2O3 capping layers for Eu-organic thin films via atomic/molecular layer deposition

Metal-organic thin films fabricated through industry-feasible atomic/molecular layer deposition (ALD/MLD) routes are highly attractive materials with diverse functional properties, but they suffer from poor chemical stability in ambient (humid) conditions and especially in direct contact with liquids which limits their practical implementation. The most efficient way to protect the inherently unstable thin films is to encapsulate them with chemically inert material layers without exposing the metal-organic material to air during the processing. Here, we demonstrate the robust in situ encapsulation of luminescent ALD/MLD-grown Eu-organic (europium hydroxyquinoline carboxylate) thin films with ultrathin (1–12 nm) ALD-grown Y2O3 capping layers deposited under the same deposition conditions. From x-ray reflectivity analysis, the successful capping-layer formation with only a minor etching effect on the underlining Eu-organic film was confirmed despite the use of the strongly oxidizing reactant (O3) for the ALD Y2O3 process. Importantly, the film composition and luminescent properties were not compromised by the etching. The stability of the encapsulated thin films was studied in both dry and humid air, as well as in liquid water. The results revealed that already a 3–4 nm Y2O3 capping layer effectively increases the Eu-organic film stability both when stored in open air and when exposed to liquid water. The enhanced stability in the liquid environment is, in particular, critical for the use of Eu-organic thin films for bioimaging applications.

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Publication Details

Journal
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Published
2025-02-13
DOI
https://doi.org/10.1116/6.0004237
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.73

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article

In situ growth of ultrathin Y2O3 capping layers for Eu-organic thin films via atomic/molecular layer deposition

Mika Lastusaari, Topias Jussila, Maarit Karppinen, Amr Ghazy et al.
1 citations
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Semiconductor materials and devices
0.73
article

In situ growth of ultrathin Y2O3 capping layers for Eu-organic thin films via atomic/molecular layer deposition

Mika Lastusaari, Topias Jussila, Maarit Karppinen, Amr Ghazy, Joona Pekkanen, Anni Virta
article en
1 citations

Abstract

Metal-organic thin films fabricated through industry-feasible atomic/molecular layer deposition (ALD/MLD) routes are highly attractive materials with diverse functional properties, but they suffer from poor chemical stability in ambient (humid) conditions and especially in direct contact with liquids which limits their practical implementation. The most efficient way to protect the inherently unstable thin films is to encapsulate them with chemically inert material layers without exposing the metal-organic material to air during the processing. Here, we demonstrate the robust in situ encapsulation of luminescent ALD/MLD-grown Eu-organic (europium hydroxyquinoline carboxylate) thin films with ultrathin (1–12 nm) ALD-grown Y2O3 capping layers deposited under the same deposition conditions. From x-ray reflectivity analysis, the successful capping-layer formation with only a minor etching effect on the underlining Eu-organic film was confirmed despite the use of the strongly oxidizing reactant (O3) for the ALD Y2O3 process. Importantly, the film composition and luminescent properties were not compromised by the etching. The stability of the encapsulated thin films was studied in both dry and humid air, as well as in liquid water. The results revealed that already a 3–4 nm Y2O3 capping layer effectively increases the Eu-organic film stability both when stored in open air and when exposed to liquid water. The enhanced stability in the liquid environment is, in particular, critical for the use of Eu-organic thin films for bioimaging applications.

Journal of Vacuum Science & Technology A Vacuum Surfaces and FilmsVol. 43(2)
University of Turku (FI), Aalto University (FI)
HORIZON EUROPE European Research Council
Openalex Percentile: Top 31%
Semiconductor materials and devices
0.73
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