Sub‐MHz homogeneous linewidth in epitaxial Y <sub>2</sub> O <sub>3</sub> : Eu <sup>3+</sup> thin film on silicon

Thin films provide nanoscale confinement together with compatibility with photonic and microwave architectures, making them ideal candidates for chip-scale quantum devices. In this work, we propose a thin film fabrication approach yielding the epitaxial growth of Eu<sup>3+</sup> doped Y<sub>2</sub>O<sub>3</sub> on silicon. We combine two of the most prominent thin film deposition techniques: chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). We report sub-megahertz optical homogeneous linewidths up to 8 K for the Eu<sup>3+</sup> dopants in the film, and lowest value of 270 kHz. This result constitutes a ten-fold improvement with respect to previous reports on the same material, opening promising perspectives for the development of scalable and compact quantum devices containing rare-earth ions.

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Publication Details

Journal
Nanophotonics
Published
2025-02-13
DOI
https://doi.org/10.1515/nanoph-2024-0682
Citations
2
Primary Topic
Silicon Nanostructures and Photoluminescence
Type
article
Field-Weighted Citation Impact
1.04

Funders

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article

Sub‐MHz homogeneous linewidth in epitaxial Y 2 O 3 : Eu 3+ thin film on silicon

Alexey Tiranov, Alban Ferrier, Philippe Goldner, Diana Serrano et al.
2 citations
Nanophotonics
Silicon Nanostructures and Photoluminescence
1.04
article

Sub‐MHz homogeneous linewidth in epitaxial Y 2 O 3 : Eu 3+ thin film on silicon

Alexey Tiranov, Alban Ferrier, Philippe Goldner, Diana Serrano, Tian Zhong, Romain Bachelet, Alexandre Tallaire, N. Harada, Anna Blin
article en
2 citations

Abstract

Thin films provide nanoscale confinement together with compatibility with photonic and microwave architectures, making them ideal candidates for chip-scale quantum devices. In this work, we propose a thin film fabrication approach yielding the epitaxial growth of Eu<sup>3+</sup> doped Y<sub>2</sub>O<sub>3</sub> on silicon. We combine two of the most prominent thin film deposition techniques: chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). We report sub-megahertz optical homogeneous linewidths up to 8 K for the Eu<sup>3+</sup> dopants in the film, and lowest value of 270 kHz. This result constitutes a ten-fold improvement with respect to previous reports on the same material, opening promising perspectives for the development of scalable and compact quantum devices containing rare-earth ions.

NanophotonicsVol. 14(11)
Université Claude Bernard Lyon 1 (FR), École Centrale de Lyon (FR), Centre National de la Recherche Scientifique (FR), Chimie ParisTech - PSL (FR), Université Sorbonne Nouvelle (FR), Université Paris Sciences et Lettres (FR), Institut des Nanotechnologies de Lyon (FR), Sorbonne Université (FR), University of Chicago (US), Institut de Recherche de Chimie Paris (FR)
European Commission, Agence Nationale de la Recherche
Openalex Percentile: Top 28%
Silicon Nanostructures and Photoluminescence
1.04
DOIOpen Access PDFOpenAlex
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