Analog/RF Performance and Reliability Investigation of Nanowire Junctionless MOSFET with Interface Traps

The present piece of work emphasizes upon the analog/RF and linearity performances of nano wire junctionlss MOSFET in the presence of interfacial trap charges. This investigation is useful in addressing the reliability issues and needed for the design of RFICs. The analog/RF and linearity performances are evaluated through figure of merits like Transconductance (Gm), cut off / unity gain frequency (Ft) and third order transconductance (Gm3). ATLAS TCAD simulator is used for device simulation. The results of simulation reveal better immunity against positive trap charges as compared to negative trap charges. The device performance degrades with negative trap charge density.