Optimization of Doping Profile in Carbon Nanotube Field Effect Transistor

A comprehensive review of Gate-All-Around (GAA) carbon nanotube field-effect transistors (CNT FETs) emphasizes the crucial role of channel doping in enhancing device performance. The advantages of selective doping techniques are highlighted for their effectiveness in reducing scattering and improving current flow. Integrating high-k dielectric materials with a metallic-wrapped gate is also discussed, offering superior electrostatic control and enabling precise threshold voltage modulation. Research indicates that GAA CNT FETs, particularly those with shorter channels and advanced doping strategies, significantly improve switching speed, current ratios, and carrier mobility. The GAA configuration, which completely encircles the nanotube, is identified as an optimal structure for implementing these doping methodologies. The potential of in situ doping is explored, with findings suggesting occasional performance benefits. The promising prospects of selective doping in GAA CNT FETs are underscored, providing a pathway to optimized device performance and leveraging the unique properties of carbon nanotubes within advanced transistor architectures. Key metrics such as sub-threshold swing (SS), on/off current ratio (ION/OFF), and drain-induced barrier lowering (DIBL) are analyzed.