Polarization Engineering of the EBL to Produce Efficient AlGaN UV-C LED

A major challenge for III-Nitride (Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">l-x</inf>N) based ultraviolet (UV-C) light emitting diode (LED) is achieving efficient hole supply from the p-region. Herein, we try to counter the issue by employing a stair-like grading strategy in the electron blocking layer. This method enhances the hole supply by modulating the polarization charge density. Additionally, it reduces resistive losses with varying the polarization charge density. The variation in polarization charge density with a stair like grading approach leads to ~22 % and ~34 % improvements in the hole and electron concentrations, respectively in the target LED structure. These improvements enhance the radiative recombination (RR) rate in the active region by 1.43-times in the final LED sample. This (the reduced resistive losses, higher hole and electron concentrations, and increased RR rate) lead to a considerable improvement in the maximum internal quantum efficiency, improving it by approximately 170% in the target LED structure.