Implementation of High-K Gate Dielectric in Cylindrical SOI Schottky Barrier MOSFET for Enhanced I_ON/I_OFF Ratio

In this work, we propose novel device architecture titled gate stack Cylindrical SOI Schottky barrier MOSFET transistor (GS-SOI-SB-CGAA). The analog/RF characteristics of the proposed structure are extensively investigated using Silvaco, which is a well-known simulator used for three-dimensional devices. This proposed MOSFET is being compared with schottky-barrier gate all around MOSFET (SB-CGAA) and silicon-on-insulator Schottky-barrier gate all around MOSFET (SOI-SB-CGAA) to investigate the analog/RF characteristics. The GS-SOI-SB-CGAA MOSFET demonstrates improved analog/RF characteristics for off-state drain current, I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>/I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> ratio, and device capacitance.