High Temperature Performance Analysis of AlGaN/GaN HEMT

Electronic devices made with wide band gap materials are useful for High-temperature applications. GaN and its alloys have proven to be the best choice for high-power microwave applications due to their superior material properties. The excellent thermal conductivity of GaN-based High Electron Mobility Transistors (HEMTs) has attracted researchers to investigate its suitability in high-temperature applications. In this paper, we have analyzed the AlGaN/GaN HEMT device performance at different temperatures up to 200°C through simulation using the TCAD tool Silvaco Atlas. The variation in device performance (DC and AC) was studied by considering the modification in device parameters and by applying proper device physics. This study will be helpful to the researchers in predicting the HEMT device reliability in high-temperature RF applications.