Study on Optical Properties of Multiple Quantum Well-Based InGaN/GaN Light Emitting Diode

The electron-optical properties like I-V characteristics, luminous power, power spectral density (PSD), and full-width half maxima (FWHM) of an InGaN/GaN multiple quantum well-based LED are analyzed using the Silvaco TCAD tool. It is shown that the anode voltage vs. anode current shows a general PN junction characteristic with a threshold voltage 4.5 V and delivers a 150mA anode current at 6.5 V. The luminous power enhances linearly with anode current and it is supported by the electron concentrations in the wells of the MQW. The results on PSD reflected that it also increases with enhanced anode voltage and shows better performance as compared to that of conventional single QW-based LED. The discussed results will be helpful in improving the internal quantum efficiency of the conventional LED/LASER structures along with unipolar laser-like QCL. A high-efficiency MQWs LED with InGaN as a well and GaN barrier is designed and analyzed.