Asymmetrically Doping Dependent Nonlinear Electron Mobility in In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As Wide Quantum Well MODFET Structure
<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{A}$</tex> cusp like nonlinear electron mobility is obtained in In<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf><tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$.53 \text{Ga} 0.47 \text{As} / \text{In}_{0.52} \text{Al}_{0.48} \text{As}$</tex> based quantum well (QW) MODFET structure by asymmetrically varying doping concentrations <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$nd1$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$nd2$</tex>, keeping <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(nd1+nd2)$</tex> unchanged. The modified sub band wave functions yield oscillatory sub band mobility via inter-subband interactions. Our results explore the effect of doping asymmetry on QW-MODFET structure.
Authors
- Sangita R. Panda (ORCID: https://orcid.org/0000-0002-8962-1035)
- А. К. Панда (ORCID: https://orcid.org/0000-0002-5087-9899)
- Manoranjan Pradhan (ORCID: https://orcid.org/0000-0003-4520-5280)
- Trinath Sahu (ORCID: https://orcid.org/0000-0001-6188-1380)
Institutions
- Veer Surendra Sai University of Technology (IN)
- Berhampur University (IN)
Publication Details
- Published
- 2024-11-30
- DOI
- https://doi.org/10.1109/edkcon62339.2024.10870670
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00