Enhancing Biosensing Sensitivity Through Simulation-Based Study of N⁺ Pocket Doped Vertical NC-TFET

In the present article, a more sensitive biosensor built on a Vertical Negative Capacitance TFET is designed and analyzed. The biosensor uses a gate stack with an N+ pocket of SiGe in the source area and a silicon-doped Hf02 ferroelectric layer. The device's performance is increased even more by including the SiGe N+ pocket in the source region, which makes the electron injection process more efficient. A decrease in the off-state surface potential is made possible by the gate stack, which comprises silicon-doped Hf02 ferroelectric with a thickness of 1 nm. This effectively prevents electron tunneling from the source region and a shallow off-state current, which further raises the biosensor's signal-to-noise ratio. The source region's integration with SiGe's N+ pocket improves the electron injection process, enabling effective and regulated carrier transport. This enhances the entire device's functionality and increases the biosensor's sensitivity to biomolecule detection.