Analyzing the Analog Performance of a Novel Normally OFF Double Gate MOS-HEMT due to Gate Length Variation

The Normally OFF Double Gate High Electron Mobility Transistor (DG-HEMT) represents a significant advancement in semiconductor technology, offering exceptional performance in high-speed and high-frequency applications. As a normally-off device, it enhances both safety and efficiency by necessitating a gate voltage to trigger conduction, thereby lowering power consumption and minimizing the risk of unintended operation. This study explores how variations in gate length (300 nm, 600 nm, and 900 nm) affect the performance of MOS-HEMTs. The results indicate that a 900 nm gate length leads to a 60.35% increase in drain current (Id) and a 99% improvement in gain, emphasizing the critical role of gate length optimization in achieving superior device control and performance. With their high electron mobility, elevated breakdown voltage, and low on-resistance, MOS-HEMTs are poised to play a crucial role in the future of fast, efficient, and reliable electronic technologies.