Impact of the Process Parameter Variation on Threshold Voltage of Short Channel Junctionless MOSFET

In this paper, we investigate the impact of process parameter variations on the threshold voltage or VTH of short-channel Junctionless MOSFETs (JLMOSFETs). Hence, mainly the variability of the VTH due to the key fabrication parameters-such as doping concentration, channel length, gate oxide thickness, and work function have been analyzed for the different oxide materials and the channel materials. MATLAB and SILVACO ATLAS-based simulations have been done to analyze the threshold voltage variability. Understanding these interactions is vital for optimizing the performance of JLTs and ensuring their viability for future generations of electronic devices.