Comparative Analysis of Electrical Parameters for High Electron Mobility Transistors

HEMT inherits higher mobility of electrons, ability to operate at higher frequency, and wide energy bandgap. In this work, surface-potential, 2-DEG density, gate-capacitance for HEMT is calculated using TCAD. The surface potential is compared for different channel potential. Further, 2-DEG density is computed for different channel potential. The gate-capacitance are compared for gate voltage from -4 V to 4 V. The computations of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$g_{m2}$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$g_{m3}$</tex> are also performed for different values of gate voltage.