Junction-Less Nanowire TFET with HfO₂/SiO₂ Stacked Gate-Oxide for Highly Sensitive Biosensor

This paper discusses a novel junction-less nanowire tunnel field effect transistor (JL-NWTFET) with stacked <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{HfO}_{2}/\mathbf{SiO}_{2}$</tex> oxide to design a very sensitive biosensor. With an increasing gate voltage, the high-k dielectric layer enables efficient band-to-band tunneling (BTBT) to occur, resulting to a reduced subthreshold swing (SS) and a higher on-current. A gate-all-around (GAA) structure and a dielectric modulation (DM) method are used by the JL-NWTFET to find biological compounds with DC values between K = 1 to K = 8. The device is analyzed by measuring changes in subthreshold swing (SS), transconductance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathbf{g}_{\mathbf{m}})$</tex>, drain current (ID), and on-current (ION). The proposed JL NWTFET biosensor is compared to conventional devices. We made the new stacked oxide JL NWTFET using high-k dielectric material <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathbf{HfO}_{2})$</tex>, which shows better performance characteristics. The simulation results specify that that the proposed heterodielectric gate oxide stack-based JL NWTFET is stronger and more reliable than regular JL NWTFETs.