Investigations on Novel Dual Metal Gate-Vertical C-Channel Nanosheet FET with f_T of 268 GHz for Beyond 5G Application

Vertical Channel Nanosheet FETs (Field Effect Transistors) are emerged as a potential solution for advancing semiconductor device performance in the era of continued scaling and improved device integration. This study compares the Drain Characteristics, analog, Radio Frequency (RF) performance between novel Dual Metal Gate (DMG) and Single metal gate (SMG) n-type Vertical C-channel Nanosheet FET (nVCNFET). DMG architecture enhances electron mobility and potential which leads to higher current ratio of 7.4 x 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> and reduced Short Channel Effects. Analog performance of DMG-nVCNFET yields 23.9 % and 9.3 % improved intrinsic gain and Transconductance Generation Factor compared to SMG-nVCNFET as a result of improved transconductance and reduced output conductance. DMG-nVCNFET achieves 82 % higher cut-off frequency (f<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> = 268 GHz) and ~ 4 times improved Gain Frequency Product (GFP = 140 THz) compared to SMG-nVCNFET, making it as a promising candidate for beyond 5G (B5G) applications.