Rapid Detection of Biomolecules by Quarapul Cavity Extended Source Vertical Dielectric Modulated TFET (QESV-DM-TFET) Biosensor
In this This work presents the performance investigation of the quadruple cavity extended source vertical TFET(QESV-DM-TFET) device for the detection of target biomolecules by using the DM approach. The unique structural advantage of the device is that the inclusion of an extended source epitaxial layer enhances the ion current of the device by facilitating both line tunneling and point tunneling for the charge carriers in two directions. The quadruple cavity structure in the device increases the net area of interaction with the target biornolecules, and this can effectively tune the device's electric property to deliver highly sensitive results for detection. The N+ pocket in the extended source region of the QESV-DM-TFET biosensor increases the vertical tunneling further through the medium of the silicon epitaxial region. The device detects the presence of the different target biomolecules using their dielectric constant values, which include streptavidin (K=2.1), Uricase (K=1.57), Biotin (K=3.57) and gelatin(K=12). The simulated QESV-DM-TFET device shows superiority in terms of on(Ion)current sensitivity and switching current sensitivity, switching current sensitivity and the device reports a switching current sensitivity of 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup>, which is a remarkable improvement in TFET biosensors.
Authors
- Deepak Kumar Panda (ORCID: https://orcid.org/0000-0001-8835-3908)
- Nelaturi Nagendra Reddy (ORCID: https://orcid.org/0000-0003-2844-7587)
- Mandem Nomitha Reddy
- Bitra Jayalakshmi
- Sarankumar Ramasamy
- Goli Srinivasa Rao
Institutions
- Vignan's Foundation for Science, Technology & Research (IN)
- Karpagam Academy of Higher Education (IN)
- Amrita Vishwa Vidyapeetham (IN)
Publication Details
- Published
- 2024-11-30
- DOI
- https://doi.org/10.1109/edkcon62339.2024.10870748
- Citations
- 3
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.63