Analysis of AlGaN/GaN-Based HEMT with 3-Step Gate Field Plate for High Power Applications

The proposed research work investigated a 3-step gate field plated heterojunction FET or high electron mobility transistor (HEMT) based on AIGaN/GaN material system. The proposed structure supports high power and high-speed applications. The proposed HEMT achieves a higher transconductance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{g}_{\mathrm{m}})$</tex> of 1.46 S/mm and subthreshold slope of 117 mV/decade. The breakdown voltage of 2250V has been achieved for proposed field plate HEMT. As a result, for this HEMT configuration, which is designed for high-power applications, characteristics like transconductance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(g_{m})$</tex>, threshold voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{V}_{\mathrm{t}})$</tex>, breakdown voltage (V BR) and subthreshold slope <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{S}_{\text{sub}})$</tex> were carefully examined. The Silvaco TCAD Simulation tool has been utilized to carry out every simulation that is described in this research work.