DC Analysis of T Shape Gate, L Shape Gate, Y Shape Gate and Field-Plate Gate AlGaN/GaN Based HEMT
In this work, a T shape gate, L shape gate, Y shape gate and Field-plate gate is designed and its DC analysis is done respectively. The gate length of 100 nm is taken for all the designed AlGaN/GaN high electron mobility transistor(HEMT). From DC analysis an increase in drain current is seen for L shape and field plate gate HEMT. Also, T shape gate and L shape gate show a higher transconductance while T shape HEMT and Y shape gate HEMT have same transconductance. A low drain induced barrier lowering(DIBL) and Sub-threshold swing(SS) is observed for Y shape gate HEMT and T shape gate HEMT. An improved transconductance efficiency is seen for Y shape gate HEMT and T shape gate HEMT. Different design offers different advantage based on application like as an amplifier.
Authors
- Manasa Ranjan Jena (ORCID: https://orcid.org/0000-0002-3412-3530)
- Lipsamayee Mishra
- G. N. Dash (ORCID: https://orcid.org/0000-0002-3097-5947)
Institutions
- Sambalpur University (IN)
- Veer Surendra Sai University of Technology (IN)
Publication Details
- Published
- 2024-11-30
- DOI
- https://doi.org/10.1109/edkcon62339.2024.10870796
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00