Exploring the Potential of AlGaN/GaN HEMT Using TCAD Simulations for Next-Generation Biosensors

This article investigates the performance of AlGaN/GaN HEMT in terms of bandgap energy, polarization charge concentration, total current density, current flowlines, and the effect of Al content and thickness of AlGaN layer on transfer and output characteristics. All the results have been extracted using the Silvaco Atlas device simulation tool. The result showed the presence of a quantum well in the structure's energy band diagram due to 2DEG. Polarization charge concentration, total current density, and current flowlines are confined to the channel only. With the increase in Al content and the thickness of the AlGaN layer, the knee point of the transfer characteristic increased, and the maximum drain current, and drain saturation voltage of the output characteristic also increased. Due to variations in the thickness of the barrier layer and Al content in the barrier layer, the current parameters of the device get modified, which can be used as a sensing metric for biosensors.