Effects of Gate Metal Engineering on Electrical Characteristics of SOI MOSFET

This paper explores the influence of gate metal engineering on the performance of Silicon -on -Insulator (SOI) MOSFETs. Conventional MOSFETs are prone to short-channel effects (SCEs), which degrade their performance as device sizes shrink. SOI MOSFETs provide improvements over conventional designs by minimizing SCEs. This study focuses on enhancing SOI MOSFET performance by introducing Dual Material Gate (DMG) technology. The DMG -SOI MOSFET demonstrates significant advantages in suppressing SCEs, particularly by reducing Drain -Induced Barrier Lowering (DIBL) and increasing drive current, which is beneficial for applications such as amplifiers. Through detailed simulations, this paper compares the electrical characteristics of single-gate (SG) and DMG SOI MOSFETs, revealing that the DMG structure offers superior performance.