Performance Investigation of L-Shaped Extended Source TFET-Based Photosensor for Near-Infrared Light Sensing Applications
In this manuscript L-shaped TFET is applied to the photosensing application for improved the optical sensitivity for the incident light focused in the optical gate in the near infrared region. The addressed photosensor gets the advantage of the line tunneling mechanism at the tunneling interface resulting in clearly distinguishing of light state current at different wave lengths. Additionally, N<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> pockets help in reduction of corner effects and improves the signal to noise ratio. Spectral sensitivity of 78 is observed owing to improved optical generation rate in the optical gate. Magnitude of SNR is reported as 79.82 dB at wavelength of 700nm.
Authors
- Chandan Kumar Pandey (ORCID: https://orcid.org/0000-0002-6177-6430)
- Anil Kumar Pathakamuri
- Umakanta Nanda (ORCID: https://orcid.org/0000-0003-4746-5297)
- Kadava R. N. Karthik (ORCID: https://orcid.org/0000-0002-0194-8341)
- Ganesh Krishna (ORCID: https://orcid.org/0000-0002-7007-1408)
- Chinna Baji Shaik (ORCID: https://orcid.org/0009-0009-8131-1444)
- Ashok Tammisetti
Institutions
- Vignan's Foundation for Science, Technology & Research (IN)
- SRM University (IN)
- National Institute of Technology Andhra Pradesh (IN)
- VIT-AP University
Publication Details
- Published
- 2024-11-30
- DOI
- https://doi.org/10.1109/edkcon62339.2024.10870798
- Citations
- 4
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.83