Performance of HfO₂ on High Electron Mobility Transistor for Microwave Applications

Present work comprises of High Electron Mobility Transistor (HEMT) with Gallium Nitride (GaN) which is utilized for microwave applications. Proposed HEMT device is applicable for high-power applications due to presence of GaN because GaN has exceptional material properties such as wide band gap material. Present work has shown use of High-K technology, Hafnium Oxide (HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>) as a passivation layer. After simulation analysis, obtained electrical parameters are such as drain current is 0.13 A/mm, maximum conduction band energy is 5.5eV, electric field is 4×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> V/mm, potential is 3.5v and conduction current density 2.87×107 A/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. Application of proposed HEMT device is satellite communication, microwave, RADAR. TCAD Silvaco Software has been used for simulation of proposed HEMT device.