Junctionless Accumulation Mode Dual Gate Ferroelectric FET (JAM-DG-FE-FET) for High Cut-Off Frequency Applications

Using TCAD Silvaco ATLAS simulator the ferro, fermi, Lombardi CVT model, Shockley-Read-Hall (SRH) recombination models, Junctionless Accumulation Mode Dual Gate Ferroelectric FET (JAM-DG-FE-FET) has been suggested and evaluated for RF/analog specifications. When comparing the JAM-DG-FE-FET configuration to the Junctionless Accumulation Mode Ferroelectric Field Effect Transistor (JAM-FE-FET) setup, key analog metrics such as gm, Av, gd, and early voltage (VEA) are obtained. Subsequently, the suggested apparatus undergoes frequency examination, and several crucial radiofrequency characteristics, such as fT is noted about the (JAM-DG-FE-FET). Therefore, when compared to (JAM-FE-FET), (JAM-DG-FE-FET) have been discovered to have improved analogue and RF performance. Therefore, it can be said that the JAM-DG-FE-FET device that is being shown here is a strong candidate for use in high-frequency systems.