Enhanced Sensitivity in InAs Based Gate Stack TFET Biosensors: An In-Depth Investigation

This work provides a thorough analysis into the sensitivity of InAs based Gate Stack TFET (GS-TFET) biosensors. Gate stack TFET have emerged as promising candidates for biosensing applications due to their unique structural advantages and enhanced sensitivity. We develop into the operational principles of these devices, emphasizing their potential for high-performance biosensing. Through detailed simulations and experimental validations, we analyze the sensitivity parameters under various biochemical interactions. Our study explores the impact of different doping concentrations, gate dielectric materials, and operating voltages on the device performance. The results demonstrate that InAs based GSTFET biosensors exhibit superior sensitivity compared to conventional biosensors, making them highly suitable for detecting low concentrations of biomolecules. This investigation provides critical insights for optimizing Gate Stack TFET biosensors for practical applications in medical diagnostics and environmental monitoring.