Study of Thermal Noise in InAsxSb1-x UTB MOS Under Sub-100 nm Range

We study the effect of device scaling for varied lengths of channel, thicknesses of channel, and thicknesses of insulating layer for varying both gate voltages and frequencies on the thermal noise performance of InAs<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf>n-channel ultra-thin body metal oxide semiconductor (UTB-MOS). To verify the existing model, the simulated transfer characteristic curve is compared with published experimental results. The minimum noise figure (NF<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</inf>), noise resistance (R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</inf>) and power spectral density of the drain current (S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ID</inf>/I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf><sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>) were calculated using the transconductance (g<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf>) and drain current (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf>) simulation data. According to our findings, thermal noise in InAs<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf>n-channel MOSFETs is dependent on device parameters and can be reduced by appropriately downscaling the channel length, channel thickness, and insulator thickness. When the channel length was decremented from 0.1 μm to 0.04 μ m at 1V of gate voltage a 0.75 kΩ decrement in noise resistance is achieved. The channel length decrement also yields a power spectral density of roughly 2.2×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-24</sup> HZ<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-l</sup> and a minimum noise figure of roughly 1.3 dB. Further improvements were observed with a reduction in channel thickness. Specifically, noise resistance and power spectral density values are significantly lowered when the channel thickness was decreased from 0.1 μ m to 0.04 μ m at the same gate voltage.