Design and Implementation of Low Power Circuits Based on 5nm Double Gate MOSFET Technology Using Different Materials

This paper presents a comprehensive investigation of 5nm double gate MOSFETs (DG MOSFETs) circuits using different substrate semiconductor materials for low-power devices. A comparative analysis of characteristics of SiGe, InGaAs and GaN as substrate materials is performed. The study reveals that InGaAs offers superior performance due to its higher electron mobility, lower threshold voltage and thermal stability than other materials studied here for low-power applications. The electrical properties of DG MOSFETs on these substrates have been investigated by calculating key parameters such as threshold voltages (Vth), Ion and Ioff currents. The results show that InGaAs-based DG MOSFETs exhibit superior performance with threshold voltage, improved leakage current and Ion/Ioff ratio compared to other substrate materials. Additionally, a lower threshold voltage has been observed for InGaAs-based devices, indicating reduced power consumption. These findings demonstrate the potential of InGaAs as a preferred substrate material for low-power, high-performance DG MOSFET devices. Double gate MOSFET circuits are designed using InGaAs and power dissipation is calculated. The results show a significant reduction in power consumption and improved circuit performance compared to traditional Si-based devices. This research demonstrates the potential of InGaAs-based DG MOSFETs for low-power electronic devices, enabling the development of energy-efficient circuits for various applications.