Effect of AlGaN Thickness Variation on the Analog Performance of a Normally-Off AlGaN/GaN Based Double Gate MOS-HEMT Device

This study investigates the influence of AlGaN layer thickness variations on the analog performance of a normally off AlGaN/GaN based double gate MOS-HEMT device. The analog metrics considered encompass the transconductance generation factor (TGF), transconductance (gm), output resistance (ro), the conduction band energy diagram and drain current (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</inf>) with respect to the gate voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</inf>) and drain voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf>). A meticulous analysis of the analog performance underscores that the electrical properties of the device are profoundly affected by the AlGaN layer thickness. A device with an AlGaN thickness of 20 nm demonstrates a substantial 48.96% increase in ON current when juxtaposed with devices possessing greater thicknesses. Furthermore, a thinner AlGaN layer yields an 83.56% enhancement in peak transconductance.