Comparative Analysis of Power Consumption and Transistor Current for 6T and 9T SRAM
This study examines the differences in transistor current flow and power consumption between 6T and 9T SRAM cells. With an emphasis on energy efficiency, it assesses both transient and DC power usage during read and write operations. In order to gain insights into reliability and performance, transistor current flow during these processes is also measured. The results help to optimize memory architectures for performance and energy economy.
Authors
- Aditya Jain (ORCID: https://orcid.org/0000-0003-2509-4608)
- Vinay Kumar (ORCID: https://orcid.org/0000-0002-3759-9091)
- Ajay Kumar (ORCID: https://orcid.org/0000-0001-8043-8253)
- Yash Raj Lata
- Kaushal Kumar (ORCID: https://orcid.org/0000-0001-9990-1869)
- Abhay Tyagi
Institutions
- Jaypee Institute of Information Technology (IN)
- Symbiosis International University (IN)
- Graphic Era University (IN)
Publication Details
- Published
- 2024-11-30
- DOI
- https://doi.org/10.1109/edkcon62339.2024.10870803
- Primary Topic
- VLSI and Analog Circuit Testing
- Type
- article
- Field-Weighted Citation Impact
- 0.00