Comparative Analysis of Power Consumption and Transistor Current for 6T and 9T SRAM

This study examines the differences in transistor current flow and power consumption between 6T and 9T SRAM cells. With an emphasis on energy efficiency, it assesses both transient and DC power usage during read and write operations. In order to gain insights into reliability and performance, transistor current flow during these processes is also measured. The results help to optimize memory architectures for performance and energy economy.

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Publication Details

Published
2024-11-30
DOI
https://doi.org/10.1109/edkcon62339.2024.10870803
Primary Topic
VLSI and Analog Circuit Testing
Type
article
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Comparative Analysis of Power Consumption and Transistor Current for 6T and 9T SRAM

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VLSI and Analog Circuit Testing
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Comparative Analysis of Power Consumption and Transistor Current for 6T and 9T SRAM

Aditya Jain, Vinay Kumar, Ajay Kumar, Yash Raj Lata, Kaushal Kumar, Abhay Tyagi
article en

Abstract

This study examines the differences in transistor current flow and power consumption between 6T and 9T SRAM cells. With an emphasis on energy efficiency, it assesses both transient and DC power usage during read and write operations. In order to gain insights into reliability and performance, transistor current flow during these processes is also measured. The results help to optimize memory architectures for performance and energy economy.

Jaypee Institute of Information Technology (IN), Symbiosis International University (IN), Graphic Era University (IN)
Affordable and clean energy
Openalex Percentile: Top 70%
VLSI and Analog Circuit Testing
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