Investigation of Analog and Digital Performance for Gallium-Arsenide GS GAA FETs

This paper investigates the effectiveness of GaAs as a fin material for both analog and digital applications in GaAs Gate-Stack Gate-All-Around FinFET with spacers. Various analog and digital parameters such as drain current, Ion, Ioff, switching speed, SS (subthreshold swing), gm (transconductance), output conductance, transconductance generation factor (TGF), intrinsic gain (Av), early voltage, Cgg and Cut-off Frequency have been examined. The simulated results indicate that incorporating GS and high-k gate spacers significantly enhanced the device's DC and AC performance metrics.