An ab Initio Study of Sub-5nm Monolayer Double-Gate Arsenene/Antemonene Junctionless Field Effect Transistors

This study investigates the effects of gate length (Lg) and doping concentration (Nd) on the performance parameters of Arsenene (As) and Antimonene (Sb) monolayer (ML) based sub-5 nm double-gate (DG) junctionless field-effect transistors (JLFETs). Here, quantum transport simulation methods have been used. Key performance parameters such as On-current (Ion) and Sub-threshold Slope (SS) are analyzed from the Id-Vg characteristics of the simulated As/Sb JLFETs. The findings reveal that Ion and SS are linear functions of Lg but increase with Nd, meeting the ITRS requirements for 2028. The simulation results suggest that As/Sb JLFETs with specific Lg and Nd demonstrate superior Ion and SS compared to DG ML As/Sb MOSFETs, making them promising candidates for both high-performance (HP) and low-power (LP) applications. Therefore, ML As and Sb-based JLFETs are confirmed to be promising nano-devices for future applications.